|
Curriculum Vitae Prof. Dr. Albrecht Winnacker
University of Heidelberg and University of Erlangen-Nuernberg
|
 |
Present positions: Senior Professor University of Heidelberg, Founding Director Center for Advanced Materials University of Heidelberg since 2010
Professor emeritus University of Erlangen, Department of Materials Science, Chair of Materials for Electronics and Energy Technology
280 publications (articles) mostly in reviewed journals
Book publication: Physik von Maser und Laser, Bibliographisches Institut Mannheim 1984
Curriculum Vitae
| 2010 - |
Founding Director Center for Advanced Materials, University of Heidelberg |
| 1991 - 2009 |
Professor and head of Institute for Electronic Materials, Engineering Faculty, University of Erlangen-Nuernberg, Germany |
| 1986 - 1991 |
Senior Scientist Corporate research Siemens AG, Erlangen, Head of Division “Compound Semiconductor Materials and Phosphors” |
| 1984 - 1985 |
Visiting Scientist at the IBM Research Laboratories, San Jose, California |
| 1978 - 1984 |
Professor for experimental physics, University of Heidelberg |
| 1970 - 1972 |
Postdoctoral fellow at the University of California, Berkeley |
| 1970 |
PhD in Physics, University of Heidelberg |
| 1961 - 1967 |
Study of Physics at Freiburg, Goettingen, Paris and Heidelberg |
| 1961 |
“Abitur” Taunusgymnasium Königstein |
| 1942 |
Born in Frankfurt/Main, Germany, Parents Prof. Dr. Karl Winnacker and Gertrud Winnacker |
Memberships and science related activities
| 2008 |
Cofounder of the CrystAl-N GmbH |
| 2004 |
Member of the Heidelberg Academy of Sciences |
| 2004 |
Member of the German Academy of Technical Sciences (acatech) |
| 2001 – 2005 |
Dean of the Faculty of Engineering University of Erlangen-Nuernberg |
| 1996 |
Cofounder and member of supervisory board of the “SiCrystal AG” |
| 1992 – 2008 |
Regular research visits in the IBM Almaden Research Laboratories, San Jose, California |
| 1983 – 2003 |
Coordinator of German-Soviet (later Russian) program on Point defects in Semiconductors and insulators |
Member of the German Physical Society DPG, the Deutsche Gesellschaft fuer Kristallzuechtung DGKK, the Deutsche Gesellschaft fuer Chemisches Apparatewesen DECHEMA, the Verein Deutscher Ingenieure VDI, and others
FIELDS OF INTEREST
New semiconductor materials for micro- and optoelectronics, SiC and AlN, phosphors for display screens and illumination devices, organic light emitting diodes , nanophosphors as markers in biology and medicine
SELECTED PUBLICATIONS
Xia, Qi, Batentschuk, M., Osvet, A., Richter, P., Häder, D.P., Schneider, J., Brabec, C.J. Wondraczek, L., Winnacker, A.
Enhanced photosynthetic activity in Spinacia oleracea by spectral modification with a photoluminescent light converting material.
(2013)N Optics Express 11; 21 Suppl 6:A909-16.
Dembski, S., Rupp, S. A., Gellermann, S. C., Batentschuk, M., Osvet, A., Winnacker, A.
Luminescent silicate core-shell nanoparticles
(2011) Journal of Colloid and Interface Science, 358 (1), pp. 32-38.
Filip, O., Epelbaum, B.M., Bickermann, M., Heimann, P., Winnacker, A.
Effects of growth direction and polarity on bulk aluminum nitride crystal properties
(2011) Journal of Crystal Growth, 318 (1), pp. 427-431
Winnacker, A., Osvet, A.
Memory and neural networks on the basis of color centers in solids
(2009) Biological Chemistry, 390 (11), pp. 1133-1138.
Krummacher, B.C., Mathai, M.K., Choong, Vi-En, Choulis, S.A., So, F., Winnacker, A.
Inluence of charge balance and microcavity effects on resultant efficiency of organic light emitting diodes
(2006) Organic Electronics 7, pp. 313ff
Winnacker, A., Shelby, R.M., Macfarlane, R.M.
Photon gated holeburning by 2step photoionization
(1985) Le Journal de Physique Colloques 01/ 46
Neumann, R. Poth. H., Winnacker, A., Wolf, A.
Electron-Ion-Cooling and Anti-Hydrogen Formation
(1983) Z. Phys. A., 313, pp 253 - 262
Startseite.